ROHM RJ1 1 Type N-Channel MOSFET, 120 A, 100 V Enhancement, 3-Pin TO-263AB RJ1P07CBHTL1

ROHM RJ1 1 Type N-Channel MOSFET, 120 A, 100 V Enhancement, 3-Pin TO-263AB RJ1P07CBHTL1

Manufacturer:
Manufacturer Part No:
RJ1P07CBHTL1
Enrgtech Part No:
ET28398818
Warranty:
Manufacturer
SAR 2.45 SAR 2.45
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Product Type:
MOSFET
Channel Type:
Type N
Maximum Continuous Drain Current Id:
120A
Maximum Drain Source Voltage Vds:
100V
Package Type:
TO-263AB
Series:
RJ1
Pin Count:
3
Maximum Drain Source Resistance Rds:
5.1mΩ
Channel Mode:
Enhancement
Maximum Gate Source Voltage Vgs:
±20 V
Typical Gate Charge Qg @ Vgs:
73.0nC
Minimum Operating Temperature:
-55°C
Forward Voltage Vf:
1.2V
Maximum Power Dissipation Pd:
135W
Maximum Operating Temperature:
150°C
Standards/Approvals:
RoHS Compliant
Number of Elements per Chip:
1
pdf icon
A700000013058626.pdf(datasheets)
Explore MOSFETs engineered for fast switching and efficiency. Enrgtech offers power transistors ideal for voltage regulation, amplification, and electronic control systems.



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