ROHM Dual (Nch+Pch) HP8K 2 Type N, Type P-Channel MOSFET, 100 V Enhancement, 8-Pin HSOP-8 HP8ME5TB1

ROHM Dual (Nch+Pch) HP8K 2 Type N, Type P-Channel MOSFET, 100 V Enhancement, 8-Pin HSOP-8 HP8ME5TB1

Manufacturer:
Manufacturer Part No:
HP8ME5TB1
Enrgtech Part No:
ET28398813
Warranty:
Manufacturer
SAR 0.60 SAR 0.60
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Product Type:
MOSFET
Channel Type:
Type N, Type P
Maximum Drain Source Voltage Vds:
100V
Package Type:
7.3 x 2.5 x 6.5mm
Series:
HP8K
Mount Type:
Surface
Pin Count:
8
Maximum Drain Source Resistance Rds:
273mΩ
Channel Mode:
Enhancement
Minimum Operating Temperature:
-55°C
Maximum Gate Source Voltage Vgs:
±20 V
Typical Gate Charge Qg @ Vgs:
19.7nC
Maximum Power Dissipation Pd:
2W
Forward Voltage Vf:
1.2V
Maximum Operating Temperature:
150°C
Transistor Configuration:
47.5kΩ
Standards/Approvals:
No
Number of Elements per Chip:
2
Automotive Standard:
No
pdf icon
A700000013059410.pdf(datasheets)
Explore MOSFETs engineered for fast switching and efficiency. Enrgtech offers power transistors ideal for voltage regulation, amplification, and electronic control systems.



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