ROHM RQ3 Type N-Channel MOSFET, 60 V Enhancement, 8-Pin HSMT-8 RQ3L060BGTB1

ROHM RQ3 Type N-Channel MOSFET, 60 V Enhancement, 8-Pin HSMT-8 RQ3L060BGTB1

Manufacturer:
Manufacturer Part No:
RQ3L060BGTB1
Enrgtech Part No:
ET28398604
Warranty:
Manufacturer
SAR 0.43 SAR 0.43
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Channel Type:
Type N
Product Type:
MOSFET
Maximum Drain Source Voltage Vds:
60V
Series:
625 mW
Package Type:
HSMT-8
Mount Type:
Surface
Pin Count:
8
Maximum Drain Source Resistance Rds:
Milli-Grid Connector Housing
Channel Mode:
Enhancement
Minimum Operating Temperature:
-55°C
Typical Gate Charge Qg @ Vgs:
2.9 x 1.3 x 0.9mm
Forward Voltage Vf:
1.2V
Maximum Gate Source Voltage Vgs:
±20 V
Maximum Power Dissipation Pd:
14W
Maximum Operating Temperature:
150°C
Standards/Approvals:
No
Automotive Standard:
No
pdf icon
A700000013058926.pdf(datasheets)
Explore MOSFETs engineered for fast switching and efficiency. Enrgtech offers power transistors ideal for voltage regulation, amplification, and electronic control systems.



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