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rq3l070bgtb1 ROHM RQ3 Type N-Channel MOSFET, 20 A, 60 V Enhancement, 8-Pin HSMT-8 RQ3L070BGTB1
rq3l070bgtb1 ROHM RQ3 Type N-Channel MOSFET, 20 A, 60 V Enhancement, 8-Pin HSMT-8 RQ3L070BGTB1

ROHM RQ3 Type N-Channel MOSFET, 20 A, 60 V Enhancement, 8-Pin HSMT-8 RQ3L070BGTB1

ROHM RQ3 Type N-Channel MOSFET, 20 A, 60 V Enhancement, 8-Pin HSMT-8 RQ3L070BGTB1

Manufacturer:
ROHM
Manufacturer Part No:
RQ3L070BGTB1
Enrgtech Part No:
ET28398533
Warranty:
Manufacturer
SAR 0.47 SAR 0.47
Checking for live stock
Channel Type:
Type N
Product Type:
MOSFET
Maximum Continuous Drain Current Id:
20A
Maximum Drain Source Voltage Vds:
60V
Series:
625 mW
Package Type:
HSMT-8
Mount Type:
Surface
Pin Count:
8
Maximum Drain Source Resistance Rds:
6.99mm
Channel Mode:
Enhancement
Maximum Power Dissipation Pd:
15W
Forward Voltage Vf:
1.2V
Typical Gate Charge Qg @ Vgs:
7.6nC
Minimum Operating Temperature:
-55°C
Maximum Gate Source Voltage Vgs:
±20 V
Maximum Operating Temperature:
150°C
Standards/Approvals:
No
Automotive Standard:
No
pdf icon
A700000013058946.pdf(datasheets)
Explore MOSFETs engineered for fast switching and efficiency. Enrgtech offers power transistors ideal for voltage regulation, amplification, and electronic control systems.
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