Vishay SIRS Type P-Channel MOSFET, 227 A, 30 V Enhancement, 8-Pin SO-8 SIRS4301DP-T1-GE3

Vishay SIRS Type P-Channel MOSFET, 227 A, 30 V Enhancement, 8-Pin SO-8 SIRS4301DP-T1-GE3

Manufacturer:
Manufacturer Part No:
SIRS4301DP-T1-GE3
Enrgtech Part No:
ET28368861
Warranty:
Manufacturer
SAR 1.36 SAR 1.36
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Channel Type:
Type P
Product Type:
MOSFET
Maximum Continuous Drain Current Id:
227A
Maximum Drain Source Voltage Vds:
30V
Series:
SIRS
Package Type:
SO-8
Mount Type:
Surface
Pin Count:
8
Maximum Drain Source Resistance Rds:
0.0015Ω
Channel Mode:
Enhancement
Minimum Operating Temperature:
-55°C
Maximum Gate Source Voltage Vgs:
±20 V
Typical Gate Charge Qg @ Vgs:
548nC
Maximum Power Dissipation Pd:
132W
Maximum Operating Temperature:
150°C
Standards/Approvals:
RoHS
Length:
5mm
Automotive Standard:
No
pdf icon
A700000010766899.pdf(datasheets)
Explore MOSFETs engineered for fast switching and efficiency. Enrgtech offers power transistors ideal for voltage regulation, amplification, and electronic control systems.



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