Vishay SI Type N-Channel MOSFET, 1.9 A, 100 V Enhancement, 6-Pin SOT-363 SI1480BDH-T1-GE3

For more information please check the datasheets.

Vishay SI Type N-Channel MOSFET, 1.9 A, 100 V Enhancement, 6-Pin SOT-363 SI1480BDH-T1-GE3

Manufacturer:

Vishay

Manufacturer Part No:

SI1480BDH-T1-GE3

Enrgtech Part No:

ET28368830

Warranty:

Manufacturer

SAR 0.09

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Product Type:

MOSFET

Channel Type:

Type N

Maximum Continuous Drain Current Id:

1.9A

Maximum Drain Source Voltage Vds:

100V

Series:

Package Type:

SOT-363

Mount Type:

Surface

Pin Count:

Maximum Drain Source Resistance Rds:

0.212Ω

Channel Mode:

Enhancement

Maximum Power Dissipation Pd:

1.7W

Typical Gate Charge Qg @ Vgs:

6nC

A700000010766945.pdf(datasheets)

Explore MOSFETs engineered for fast switching and efficiency. Enrgtech offers power transistors ideal for voltage regulation, amplification, and electronic control systems.

Vishay SI Type N-Channel MOSFET, 1.9 A, 100 V Enhancement, 6-Pin SOT-363 SI1480BDH-T1-GE3

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