STMicroelectronics SCT025H120G3AG Type N-Channel MOSFET, 55 A, 1200 V Enhancement, 7-Pin H2PAK-7 SCT025H120G3AG

STMicroelectronics SCT025H120G3AG Type N-Channel MOSFET, 55 A, 1200 V Enhancement, 7-Pin H2PAK-7 SCT025H120G3AG

Manufacturer:
Manufacturer Part No:
SCT025H120G3AG
Enrgtech Part No:
ET28351599
Warranty:
Manufacturer
SAR 13.85 SAR 13.85
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Channel Type:
Type N
Product Type:
MOSFET
Maximum Continuous Drain Current Id:
55A
Maximum Drain Source Voltage Vds:
1200V
Package Type:
H2PAK-7
Series:
SCT025H120G3AG
Mount Type:
Surface
Pin Count:
7
Maximum Drain Source Resistance Rds:
27mΩ
Channel Mode:
Enhancement
Typical Gate Charge Qg @ Vgs:
73nC
Minimum Operating Temperature:
-55°C
Maximum Power Dissipation Pd:
375W
Forward Voltage Vf:
2.7V
Maximum Gate Source Voltage Vgs:
22 V
Maximum Operating Temperature:
175°C
Width:
3 nC @ 4.5 V, 5.5 nC @ 4.5 V
Standards/Approvals:
AEC-Q101, RoHS
Height:
4.8mm
Length:
15.25mm
Automotive Standard:
AEC-Q101
pdf icon
A700000012489165.pdf(datasheets)
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