Nexperia PSM Type N-Channel MOSFET, 205 A, 80 V Enhancement, 5-Pin LFPAK PSMN2R8-80SSFJ

Nexperia PSM Type N-Channel MOSFET, 205 A, 80 V Enhancement, 5-Pin LFPAK PSMN2R8-80SSFJ

Manufacturer:
Manufacturer Part No:
PSMN2R8-80SSFJ
Enrgtech Part No:
ET28324270
Warranty:
Manufacturer
SAR 4.03 SAR 4.03
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Product Type:
MOSFET
Channel Type:
Type N
Maximum Continuous Drain Current Id:
205A
Maximum Drain Source Voltage Vds:
80V
Series:
PSM
Package Type:
LFPAK
Mount Type:
Surface
Pin Count:
5
Maximum Drain Source Resistance Rds:
2.8mΩ
Channel Mode:
Enhancement
Maximum Power Dissipation Pd:
341W
Typical Gate Charge Qg @ Vgs:
143nC
Maximum Gate Source Voltage Vgs:
10 V
Minimum Operating Temperature:
-55°C
Maximum Operating Temperature:
175°C
Standards/Approvals:
Ha-free and RoHS
Automotive Standard:
No
pdf icon
A700000012485566.pdf(datasheets)
Explore MOSFETs engineered for fast switching and efficiency. Enrgtech offers power transistors ideal for voltage regulation, amplification, and electronic control systems.



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