Nexperia PSM Type N-Channel MOSFET, 210 A, 100 V Enhancement, 5-Pin LFPAK PSMN2R9-100SSEJ

Nexperia PSM Type N-Channel MOSFET, 210 A, 100 V Enhancement, 5-Pin LFPAK PSMN2R9-100SSEJ

Manufacturer:
Manufacturer Part No:
PSMN2R9-100SSEJ
Enrgtech Part No:
ET28324261
Warranty:
Manufacturer
SAR 5.80 SAR 5.80
Checking for live stock
Channel Type:
Type N
Product Type:
MOSFET
Maximum Continuous Drain Current Id:
210A
Maximum Drain Source Voltage Vds:
100V
Series:
PSM
Package Type:
LFPAK
Mount Type:
Surface
Pin Count:
5
Maximum Drain Source Resistance Rds:
2.9mΩ
Channel Mode:
Enhancement
Minimum Operating Temperature:
-55°C
Maximum Power Dissipation Pd:
341W
Typical Gate Charge Qg @ Vgs:
7.9ns
Maximum Gate Source Voltage Vgs:
20 V
Maximum Operating Temperature:
175°C
Standards/Approvals:
RoHS
Automotive Standard:
No
pdf icon
A700000012485574.pdf(datasheets)
Explore MOSFETs engineered for fast switching and efficiency. Enrgtech offers power transistors ideal for voltage regulation, amplification, and electronic control systems.



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