Nexperia NextPower-S3 Schottky-Plus technology Type N-Channel MOSFET, 290 A, 40 V Enhancement, 5-Pin LFPAK

Nexperia NextPower-S3 Schottky-Plus technology Type N-Channel MOSFET, 290 A, 40 V Enhancement, 5-Pin LFPAK

Manufacturer:
Manufacturer Part No:
PSMN1R0-40YSHX
Enrgtech Part No:
ET28324216
Warranty:
Manufacturer
SAR 2.54 SAR 2.54
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Product Type:
MOSFET
Channel Type:
Type N
Maximum Continuous Drain Current Id:
290A
Maximum Drain Source Voltage Vds:
40V
Package Type:
LFPAK
Series:
NextPower-S3 Schottky-Plus technology
Mount Type:
Surface
Pin Count:
5
Maximum Drain Source Resistance Rds:
1mΩ
Channel Mode:
Enhancement
Minimum Operating Temperature:
-55°C
Typical Gate Charge Qg @ Vgs:
87nC
Maximum Power Dissipation Pd:
333W
Maximum Gate Source Voltage Vgs:
20 V
Maximum Operating Temperature:
175°C
Standards/Approvals:
RoHS
Automotive Standard:
No
pdf icon
A700000012485378.pdf(datasheets)
Explore MOSFETs engineered for fast switching and efficiency. Enrgtech offers power transistors ideal for voltage regulation, amplification, and electronic control systems.



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