Infineon IPD Type N-Channel MOSFET, 35 A, 120 V Enhancement, 3-Pin PG-TO-252

Manufacturer:

Infineon

Manufacturer Part No:

IPD35N12S3L24ATMA1

Enrgtech Part No:

ET26025159

Warranty:

Manufacturer

SAR 0.41

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Product Type:

MOSFET

Channel Type:

Type N

Maximum Continuous Drain Current Id:

35A

Maximum Drain Source Voltage Vds:

120V

Series:

IPD

Package Type:

PG-TO-252

Mount Type:

Surface

Pin Count:

Maximum Drain Source Resistance Rds:

24mΩ

Channel Mode:

Enhancement

Maximum Power Dissipation Pd:

71W

Typical Gate Charge Qg @ Vgs:

30nC

A700000009480976.pdf(datasheets)

Explore MOSFETs engineered for fast switching and efficiency. Enrgtech offers power transistors ideal for voltage regulation, amplification, and electronic control systems.

Infineon IPD Type N-Channel MOSFET, 35 A, 120 V Enhancement, 3-Pin PG-TO-252

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