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sihk075n60ef-t1ge3 Vishay Type N-Channel MOSFET & Diode, 33 A, 650 V Depletion, 8-Pin PowerPAK 10 x 12
sihk075n60ef-t1ge3 Vishay Type N-Channel MOSFET & Diode, 33 A, 650 V Depletion, 8-Pin PowerPAK 10 x 12

Vishay Type N-Channel MOSFET & Diode, 33 A, 650 V Depletion, 8-Pin PowerPAK 10 x 12

Vishay Type N-Channel MOSFET & Diode, 33 A, 650 V Depletion, 8-Pin PowerPAK 10 x 12

Manufacturer:
Vishay
Manufacturer Part No:
SIHK075N60EF-T1GE3
Enrgtech Part No:
ET24148161
Warranty:
Manufacturer
SAR 2.55 SAR 2.55
Checking for live stock
Product Type:
MOSFET & Diode
Channel Type:
Type N
Maximum Continuous Drain Current Id:
2.42mm
Maximum Drain Source Voltage Vds:
650V
Package Type:
PowerPAK 10 x 12
Mount Type:
Surface
Pin Count:
8
Maximum Drain Source Resistance Rds:
0.05mΩ
Channel Mode:
Depletion
Maximum Gate Source Voltage Vgs:
20 V
Maximum Power Dissipation Pd:
132W
Typical Gate Charge Qg @ Vgs:
6.49kΩ
Minimum Operating Temperature:
-55°C
Forward Voltage Vf:
1.1V
Maximum Operating Temperature:
175°C
Width:
5.15 mm
Standards/Approvals:
No
Length:
6.15mm
Automotive Standard:
AEC-Q101
pdf icon
A700000009139931.pdf(datasheets)
Explore MOSFETs engineered for fast switching and efficiency. Enrgtech offers power transistors ideal for voltage regulation, amplification, and electronic control systems.
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