ROHM RW4E065GN Type N-Channel MOSFET, 10.7 A, 30 V Enhancement, 7-Pin HEML1616L7 RW4E065GNTCL1

For more information please check the datasheets.

ROHM RW4E065GN Type N-Channel MOSFET, 10.7 A, 30 V Enhancement, 7-Pin HEML1616L7 RW4E065GNTCL1

Manufacturer:

ROHM

Manufacturer Part No:

RW4E065GNTCL1

Enrgtech Part No:

ET24142329

Warranty:

Manufacturer

SAR 0.81

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Channel Type:

Type N

Product Type:

MOSFET

Maximum Continuous Drain Current Id:

10.7A

Maximum Drain Source Voltage Vds:

30V

Series:

RW4E065GN

Package Type:

HEML1616L7

Pin Count:

Maximum Drain Source Resistance Rds:

2.7mΩ

Channel Mode:

Enhancement

Maximum Gate Source Voltage Vgs:

30 V

Maximum Power Dissipation Pd:

104W

Forward Voltage Vf:

1.2V

A700000009005416.pdf(datasheets)

Explore MOSFETs engineered for fast switching and efficiency. Enrgtech offers power transistors ideal for voltage regulation, amplification, and electronic control systems.

ROHM RW4E065GN Type N-Channel MOSFET, 10.7 A, 30 V Enhancement, 7-Pin HEML1616L7 RW4E065GNTCL1

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