ROHM Type N-Channel MOSFET, 4 A, 650 V Enhancement, 3-Pin TO-252 R6504END3TL1

ROHM Type N-Channel MOSFET, 4 A, 650 V Enhancement, 3-Pin TO-252 R6504END3TL1

Manufacturer:
Manufacturer Part No:
R6504END3TL1
Enrgtech Part No:
ET22543348
Warranty:
Manufacturer
SAR 1.20 SAR 1.20
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Channel Type:
Type N
Product Type:
MOSFET
Maximum Continuous Drain Current Id:
4A
Maximum Drain Source Voltage Vds:
650V
Package Type:
TO-252
Mount Type:
Surface
Pin Count:
3
Maximum Drain Source Resistance Rds:
1.05Ω
Channel Mode:
Enhancement
Typical Gate Charge Qg @ Vgs:
15nC
Maximum Power Dissipation Pd:
58W
Maximum Gate Source Voltage Vgs:
20 V
Minimum Operating Temperature:
-55°C
Maximum Operating Temperature:
150°C
Standards/Approvals:
No
Height:
10.4mm
Length:
6.4mm
Width:
2.4 mm
Automotive Standard:
No
pdf icon
A700000008359757.pdf(datasheets)
Explore MOSFETs engineered for fast switching and efficiency. Enrgtech offers power transistors ideal for voltage regulation, amplification, and electronic control systems.



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