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sizf906bdt-t1-ge3 Vishay Dual TrenchFET 2 Type N-Channel MOSFET, 257 A, 30 V Enhancement, 8-Pin PowerPAIR 6 x 5F
sizf906bdt-t1-ge3 Vishay Dual TrenchFET 2 Type N-Channel MOSFET, 257 A, 30 V Enhancement, 8-Pin PowerPAIR 6 x 5F

Vishay Dual TrenchFET 2 Type N-Channel MOSFET, 257 A, 30 V Enhancement, 8-Pin PowerPAIR 6 x 5F

Vishay Dual TrenchFET 2 Type N-Channel MOSFET, 257 A, 30 V Enhancement, 8-Pin PowerPAIR 6 x 5F

Manufacturer:
Vishay
Manufacturer Part No:
SiZF906BDT-T1-GE3
Enrgtech Part No:
ET22535425
Warranty:
Manufacturer
SAR 0.55 SAR 0.55
Checking for live stock
Channel Type:
Type N
Product Type:
MOSFET
Maximum Continuous Drain Current Id:
257A
Maximum Drain Source Voltage Vds:
30V
Series:
TrenchFET
Package Type:
PowerPAIR 6 x 5F
Mount Type:
Surface
Pin Count:
8
Maximum Drain Source Resistance Rds:
0.0021Ω
Channel Mode:
Enhancement
Maximum Gate Source Voltage Vgs:
20 V
Maximum Power Dissipation Pd:
EL Connector Housing
Minimum Operating Temperature:
-55°C
Typical Gate Charge Qg @ Vgs:
25nC
Transistor Configuration:
Dual
Maximum Operating Temperature:
150°C
Standards/Approvals:
RoHS
Number of Elements per Chip:
2
Automotive Standard:
No
pdf icon
A700000008282563.pdf(datasheets)
Explore MOSFETs engineered for fast switching and efficiency. Enrgtech offers power transistors ideal for voltage regulation, amplification, and electronic control systems.
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