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sis590dn-t1-ge3 Vishay Dual TrenchFET 2 Type P, Type N-Channel MOSFET, 4 A, 100 V Enhancement, 8-Pin PowerPAK 1212-8 Dual
sis590dn-t1-ge3 Vishay Dual TrenchFET 2 Type P, Type N-Channel MOSFET, 4 A, 100 V Enhancement, 8-Pin PowerPAK 1212-8 Dual

Vishay Dual TrenchFET 2 Type P, Type N-Channel MOSFET, 4 A, 100 V Enhancement, 8-Pin PowerPAK 1212-8 Dual

Vishay Dual TrenchFET 2 Type P, Type N-Channel MOSFET, 4 A, 100 V Enhancement, 8-Pin PowerPAK 1212-8 Dual

Manufacturer:
Vishay
Manufacturer Part No:
SiS590DN-T1-GE3
Enrgtech Part No:
ET22535417
Warranty:
Manufacturer
SAR 0.31 SAR 0.31
Checking for live stock
Product Type:
MOSFET
Channel Type:
Type P, Type N
Maximum Continuous Drain Current Id:
4A
Maximum Drain Source Voltage Vds:
100V
Series:
TrenchFET
Package Type:
PowerPAK 1212-8 Dual
Mount Type:
Surface
Pin Count:
8
Maximum Drain Source Resistance Rds:
0.251Ω
Channel Mode:
Enhancement
Maximum Gate Source Voltage Vgs:
20 V
Typical Gate Charge Qg @ Vgs:
4.5nC
Minimum Operating Temperature:
-55°C
Maximum Power Dissipation Pd:
23.1W
Maximum Operating Temperature:
150°C
Transistor Configuration:
Dual
Standards/Approvals:
RoHS
Number of Elements per Chip:
2
Automotive Standard:
No
pdf icon
A700000008282747.pdf(datasheets)
Explore MOSFETs engineered for fast switching and efficiency. Enrgtech offers power transistors ideal for voltage regulation, amplification, and electronic control systems.
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