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sihp21n80aef-ge3 Vishay E Type N-Channel MOSFET, 165.3 A, 850 V Enhancement, 3-Pin TO-220
sihp21n80aef-ge3 Vishay E Type N-Channel MOSFET, 165.3 A, 850 V Enhancement, 3-Pin TO-220

Vishay E Type N-Channel MOSFET, 165.3 A, 850 V Enhancement, 3-Pin TO-220

Vishay E Type N-Channel MOSFET, 165.3 A, 850 V Enhancement, 3-Pin TO-220

Manufacturer:
Vishay
Manufacturer Part No:
SIHP21N80AEF-GE3
Enrgtech Part No:
ET22535396
Warranty:
Manufacturer
SAR 1.90 SAR 1.90
Checking for live stock
Product Type:
MOSFET
Channel Type:
Type N
Maximum Continuous Drain Current Id:
165.3A
Maximum Drain Source Voltage Vds:
850V
Series:
E
Package Type:
TO-220
Mount Type:
Through Hole
Pin Count:
3
Maximum Drain Source Resistance Rds:
250mΩ
Channel Mode:
Enhancement
Forward Voltage Vf:
1.2V
Maximum Power Dissipation Pd:
179W
Maximum Gate Source Voltage Vgs:
30 V
Minimum Operating Temperature:
-55°C
Typical Gate Charge Qg @ Vgs:
47nC
Maximum Operating Temperature:
150°C
Standards/Approvals:
No
Automotive Standard:
No
pdf icon
A700000008282775.pdf(datasheets)
Explore MOSFETs engineered for fast switching and efficiency. Enrgtech offers power transistors ideal for voltage regulation, amplification, and electronic control systems.
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