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sihp080n60e-ge3 Vishay E Type N-Channel MOSFET, 35 A, 650 V Enhancement, 3-Pin TO-220
sihp080n60e-ge3 Vishay E Type N-Channel MOSFET, 35 A, 650 V Enhancement, 3-Pin TO-220

Vishay E Type N-Channel MOSFET, 35 A, 650 V Enhancement, 3-Pin TO-220

Vishay E Type N-Channel MOSFET, 35 A, 650 V Enhancement, 3-Pin TO-220

Manufacturer:
Vishay
Manufacturer Part No:
SiHP080N60E-GE3
Enrgtech Part No:
ET22535394
Warranty:
Manufacturer
SAR 1.83 SAR 1.83
Checking for live stock
Channel Type:
Type N
Product Type:
MOSFET
Maximum Continuous Drain Current Id:
35A
Maximum Drain Source Voltage Vds:
650V
Series:
E
Package Type:
TO-220
Mount Type:
Through Hole
Pin Count:
3
Maximum Drain Source Resistance Rds:
80mΩ
Channel Mode:
Enhancement
Maximum Gate Source Voltage Vgs:
30 V
Maximum Power Dissipation Pd:
ZNR
Typical Gate Charge Qg @ Vgs:
42nC
Forward Voltage Vf:
1.2V
Minimum Operating Temperature:
-55°C
Maximum Operating Temperature:
150°C
Standards/Approvals:
No
Automotive Standard:
No
pdf icon
A700000008282659.pdf(datasheets)
Explore MOSFETs engineered for fast switching and efficiency. Enrgtech offers power transistors ideal for voltage regulation, amplification, and electronic control systems.
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