Vishay E Type N-Channel MOSFET, 9 A, 850 V Enhancement, 3-Pin TO-220

Vishay E Type N-Channel MOSFET, 9 A, 850 V Enhancement, 3-Pin TO-220

Manufacturer:
Manufacturer Part No:
SIHA24N80AE-GE3
Enrgtech Part No:
ET22535377
Warranty:
Manufacturer
SAR 1.41 SAR 1.41
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Product Type:
MOSFET
Channel Type:
Type N
Maximum Continuous Drain Current Id:
9A
Maximum Drain Source Voltage Vds:
850V
Series:
E
Package Type:
TO-220
Mount Type:
Through Hole
Pin Count:
3
Maximum Drain Source Resistance Rds:
184mΩ
Channel Mode:
Enhancement
Forward Voltage Vf:
1.2V
Minimum Operating Temperature:
-55°C
Typical Gate Charge Qg @ Vgs:
59nC
Maximum Gate Source Voltage Vgs:
30 V
Maximum Power Dissipation Pd:
35W
Maximum Operating Temperature:
150°C
Standards/Approvals:
No
Automotive Standard:
No
pdf icon
A700000008282531.pdf(datasheets)
Explore MOSFETs engineered for fast switching and efficiency. Enrgtech offers power transistors ideal for voltage regulation, amplification, and electronic control systems.



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