STMicroelectronics SCTWA35N65G2V-4 Type N-Channel MOSFET, 45 A, 650 V Enhancement, 4-Pin Hip-247

STMicroelectronics SCTWA35N65G2V-4 Type N-Channel MOSFET, 45 A, 650 V Enhancement, 4-Pin Hip-247

Manufacturer:
Manufacturer Part No:
SCTWA35N65G2V-4
Enrgtech Part No:
ET22535212
Warranty:
Manufacturer
SAR 10.38 SAR 10.38
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Channel Type:
Type N
Product Type:
MOSFET
Maximum Continuous Drain Current Id:
45A
Maximum Drain Source Voltage Vds:
650V
Series:
SCTWA35N65G2V-4
Package Type:
Hip-247
Mount Type:
Through Hole
Pin Count:
4
Maximum Drain Source Resistance Rds:
67mΩ
Channel Mode:
Enhancement
Maximum Power Dissipation Pd:
240W
Forward Voltage Vf:
3.3V
Typical Gate Charge Qg @ Vgs:
73nC
Minimum Operating Temperature:
-55°C
Maximum Gate Source Voltage Vgs:
22 V
Maximum Operating Temperature:
200°C
Length:
20.1mm
Height:
5.1mm
Width:
21.1 mm
Standards/Approvals:
No
Automotive Standard:
No
pdf icon
A700000008283557.pdf(datasheets)
Explore MOSFETs engineered for fast switching and efficiency. Enrgtech offers power transistors ideal for voltage regulation, amplification, and electronic control systems.



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