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ipd80r1k4ceatma1 Infineon CoolMOS CE Type N-Channel MOSFET, 3.9 A, 800 V Enhancement, 3-Pin TO-252
ipd80r1k4ceatma1 Infineon CoolMOS CE Type N-Channel MOSFET, 3.9 A, 800 V Enhancement, 3-Pin TO-252

Infineon CoolMOS CE Type N-Channel MOSFET, 3.9 A, 800 V Enhancement, 3-Pin TO-252

Infineon CoolMOS CE Type N-Channel MOSFET, 3.9 A, 800 V Enhancement, 3-Pin TO-252

Manufacturer:
Infineon
Manufacturer Part No:
IPD80R1K4CEATMA1
Enrgtech Part No:
ET21696028
Warranty:
Manufacturer
SAR 0.36 SAR 0.36
Checking for live stock
Channel Type:
Type N
Product Type:
MOSFET
Maximum Continuous Drain Current Id:
3.9A
Maximum Drain Source Voltage Vds:
800V
Package Type:
TO-252
Series:
CoolMOS CE
Mount Type:
Surface
Pin Count:
3
Maximum Drain Source Resistance Rds:
1.4Ω
Channel Mode:
Enhancement
Forward Voltage Vf:
1.2V
Minimum Operating Temperature:
-55°C
Typical Gate Charge Qg @ Vgs:
3.2 x 4.5mm
Maximum Gate Source Voltage Vgs:
20 V
Maximum Power Dissipation Pd:
IDT
Maximum Operating Temperature:
150°C
Standards/Approvals:
No
Width:
6.42 mm
Height:
2.35mm
Length:
6.65mm
Automotive Standard:
No
pdf icon
A700000007367285.pdf(datasheets)
Explore MOSFETs engineered for fast switching and efficiency. Enrgtech offers power transistors ideal for voltage regulation, amplification, and electronic control systems.
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