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ipb60r360p7atma1 Infineon 600V CoolMOS P7 Type N-Channel MOSFET, 9 A, 600 V Enhancement, 3-Pin TO-263
ipb60r360p7atma1 Infineon 600V CoolMOS P7 Type N-Channel MOSFET, 9 A, 600 V Enhancement, 3-Pin TO-263

Infineon 600V CoolMOS P7 Type N-Channel MOSFET, 9 A, 600 V Enhancement, 3-Pin TO-263

Infineon 600V CoolMOS P7 Type N-Channel MOSFET, 9 A, 600 V Enhancement, 3-Pin TO-263

Manufacturer:
Infineon
Manufacturer Part No:
IPB60R360P7ATMA1
Enrgtech Part No:
ET21696017
Warranty:
Manufacturer
SAR 0.44 SAR 0.44
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Product Type:
MOSFET
Channel Type:
Type N
Maximum Continuous Drain Current Id:
9A
Maximum Drain Source Voltage Vds:
600V
Package Type:
TO-263
Series:
600V CoolMOS P7
Mount Type:
Surface
Pin Count:
3
Maximum Drain Source Resistance Rds:
360mΩ
Channel Mode:
Enhancement
Minimum Operating Temperature:
-55°C
Typical Gate Charge Qg @ Vgs:
ROX3S
Forward Voltage Vf:
0.9V
Maximum Gate Source Voltage Vgs:
20 V
Maximum Power Dissipation Pd:
41W
Maximum Operating Temperature:
150°C
Standards/Approvals:
No
Length:
10.02mm
Height:
4.5mm
Width:
9.27 mm
Automotive Standard:
No
pdf icon
A700000007367433.pdf(datasheets)
Explore MOSFETs engineered for fast switching and efficiency. Enrgtech offers power transistors ideal for voltage regulation, amplification, and electronic control systems.
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