Enrgtech
Enrgtech

Deliver to

Saudi Arabia

Categories
Brands
Part Numbers
Top Products
Register
0
You have 0 item in your basket
VIEW BASKET CHECK OUT
ipb120n08s403atma1 Infineon OptiMOS -T2 Type N-Channel MOSFET, 120 A, 80 V Enhancement, 3-Pin TO-263 IPB120N08S403ATMA1
ipb120n08s403atma1 Infineon OptiMOS -T2 Type N-Channel MOSFET, 120 A, 80 V Enhancement, 3-Pin TO-263 IPB120N08S403ATMA1

Infineon OptiMOS -T2 Type N-Channel MOSFET, 120 A, 80 V Enhancement, 3-Pin TO-263 IPB120N08S403ATMA1

Infineon OptiMOS -T2 Type N-Channel MOSFET, 120 A, 80 V Enhancement, 3-Pin TO-263 IPB120N08S403ATMA1

Manufacturer:
Infineon
Manufacturer Part No:
IPB120N08S403ATMA1
Enrgtech Part No:
ET21696014
Warranty:
Manufacturer
SAR 5.23 SAR 5.23
Checking for live stock
Channel Type:
Type N
Product Type:
MOSFET
Maximum Continuous Drain Current Id:
120A
Maximum Drain Source Voltage Vds:
80V
Series:
OptiMOS -T2
Package Type:
TO-263
Mount Type:
Surface
Pin Count:
3
Maximum Drain Source Resistance Rds:
2.5mΩ
Channel Mode:
Enhancement
Maximum Power Dissipation Pd:
278W
Minimum Operating Temperature:
-55°C
Typical Gate Charge Qg @ Vgs:
128nC
Forward Voltage Vf:
1.3V
Maximum Gate Source Voltage Vgs:
20 V
Maximum Operating Temperature:
175°C
Standards/Approvals:
No
Length:
10.02mm
Height:
4.5mm
Width:
9.27 mm
Automotive Standard:
AEC-Q101
pdf icon
A700000007367253.pdf(datasheets)
Explore MOSFETs engineered for fast switching and efficiency. Enrgtech offers power transistors ideal for voltage regulation, amplification, and electronic control systems.
Product Reviews