Vishay N-Channel 80 V N-Channel MOSFET, 137.5 A, 80 V, 8-Pin PowerPAK SO-8 SIR5802DP-T1-RE3

Vishay N-Channel 80 V N-Channel MOSFET, 137.5 A, 80 V, 8-Pin PowerPAK SO-8 SIR5802DP-T1-RE3

Manufacturer:
Manufacturer Part No:
SIR5802DP-T1-RE3
Enrgtech Part No:
ET21641744
Warranty:
Manufacturer
SAR 0.74 SAR 0.74
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Channel Type:
N
Maximum Continuous Drain Current:
137.5 A
Maximum Drain Source Voltage:
80 V
Series:
N-Channel 80 V
Package Type:
PowerPAK SO-8
Mounting Type:
Surface Mount
Pin Count:
8
Maximum Drain Source Resistance:
0.004 Ω
Maximum Gate Threshold Voltage:
4V
Number of Elements per Chip:
1
Resistance:
180kΩ
Product Type:
Surface Mount Resistor
Technology:
Thin Film
Package/Case:
0603
Tolerance:
±0.1 %
Packaging:
Punched Carrier Tape
Power Rating:
0.1W
Voltage:
75 V
Temperature Coefficient:
±25 ppm/°C
Automotive Standard:
AEC-Q200
Series:
ERA
Minimum Operating Temperature:
-55°C
Maximum Operating Temperature:
155°C
Standards/Approvals:
RoHS
Height:
0.45mm
Width:
0.8 mm
Length:
1.6mm
Termination Style:
Solder
Distrelec Product Id:
304-29-755
pdf icon
A700000007970235.pdf(datasheets)
Explore MOSFETs engineered for fast switching and efficiency. Enrgtech offers power transistors ideal for voltage regulation, amplification, and electronic control systems.



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