Infineon CoolMOS Type N-Channel MOSFET & Diode, 97 A, 650 V Enhancement, 3-Pin TO-247

Infineon CoolMOS Type N-Channel MOSFET & Diode, 97 A, 650 V Enhancement, 3-Pin TO-247

Manufacturer:
Manufacturer Part No:
IPW60R090CFD7XKSA1
Enrgtech Part No:
ET21626919
Warranty:
Manufacturer
SAR 3.31 SAR 3.31
Checking for live stock
Channel Type:
Type N
Product Type:
MOSFET & Diode
Maximum Continuous Drain Current Id:
97A
Maximum Drain Source Voltage Vds:
650V
Series:
CoolMOS
Package Type:
TO-247
Mount Type:
Through Hole
Pin Count:
3
Maximum Drain Source Resistance Rds:
90mΩ
Channel Mode:
Enhancement
Typical Gate Charge Qg @ Vgs:
F93
Maximum Power Dissipation Pd:
125W
Maximum Gate Source Voltage Vgs:
20 V
Minimum Operating Temperature:
-55°C
Forward Voltage Vf:
1V
Maximum Operating Temperature:
150°C
Length:
31.5 x 22 x 36.5mm
Standards/Approvals:
No
Height:
21.1mm
Width:
361mm
Automotive Standard:
No
pdf icon
A700000007726444.pdf(datasheets)
Explore MOSFETs engineered for fast switching and efficiency. Enrgtech offers power transistors ideal for voltage regulation, amplification, and electronic control systems.



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