Infineon CoolMOS P7 Type N-Channel MOSFET & Diode, 4 A, 950 V Enhancement, 3-Pin TO-251

Infineon CoolMOS P7 Type N-Channel MOSFET & Diode, 4 A, 950 V Enhancement, 3-Pin TO-251

Manufacturer:
Manufacturer Part No:
IPU95R2K0P7AKMA1
Enrgtech Part No:
ET21626918
Warranty:
Manufacturer
SAR 0.62 SAR 0.62
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Product Type:
MOSFET & Diode
Channel Type:
Type N
Maximum Continuous Drain Current Id:
4A
Maximum Drain Source Voltage Vds:
950V
Package Type:
TO-251
Series:
CoolMOS P7
Mount Type:
Through Hole
Pin Count:
3
Maximum Drain Source Resistance Rds:
Channel Mode:
Enhancement
Typical Gate Charge Qg @ Vgs:
WR-MPC3
Minimum Operating Temperature:
-55°C
Maximum Power Dissipation Pd:
37W
Maximum Gate Source Voltage Vgs:
20 V
Forward Voltage Vf:
0.9V
Maximum Operating Temperature:
150°C
Length:
6.73mm
Width:
2.41 mm
Height:
330µF
Standards/Approvals:
No
Automotive Standard:
No
pdf icon
A700000007726569.pdf(datasheets)
Explore MOSFETs engineered for fast switching and efficiency. Enrgtech offers power transistors ideal for voltage regulation, amplification, and electronic control systems.



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