Infineon HEXFET Type N-Channel MOSFET, 45 A, 250 V TO-263

Infineon HEXFET Type N-Channel MOSFET, 45 A, 250 V TO-263

Manufacturer:
Manufacturer Part No:
IRFS4229TRLPBF
Enrgtech Part No:
ET21614688
Warranty:
Manufacturer
SAR 1.28 SAR 1.28
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Product Type:
MOSFET
Channel Type:
Type N
Maximum Continuous Drain Current Id:
45A
Maximum Drain Source Voltage Vds:
250V
Series:
HEXFET
Package Type:
TO-263
Mount Type:
Surface
Maximum Drain Source Resistance Rds:
48mΩ
Typical Gate Charge Qg @ Vgs:
380
Maximum Power Dissipation Pd:
330W
Maximum Gate Source Voltage Vgs:
20 V
Minimum Operating Temperature:
-55°C
Maximum Operating Temperature:
175°C
Width:
EH Connector Housing
Length:
10.67mm
Height:
9.65mm
Standards/Approvals:
EIA 418
Automotive Standard:
No
pdf icon
A700000007498014.pdf(datasheets)
Explore MOSFETs engineered for fast switching and efficiency. Enrgtech offers power transistors ideal for voltage regulation, amplification, and electronic control systems.



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