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irf3805strlpbf Infineon HEXFET Type N-Channel MOSFET, 210 A, 55 V Enhancement, 3-Pin TO-263
irf3805strlpbf Infineon HEXFET Type N-Channel MOSFET, 210 A, 55 V Enhancement, 3-Pin TO-263

Infineon HEXFET Type N-Channel MOSFET, 210 A, 55 V Enhancement, 3-Pin TO-263

Infineon HEXFET Type N-Channel MOSFET, 210 A, 55 V Enhancement, 3-Pin TO-263

Manufacturer:
Infineon
Manufacturer Part No:
IRF3805STRLPBF
Enrgtech Part No:
ET21614671
Warranty:
Manufacturer
SAR 1.75 SAR 1.75
Checking for live stock
Product Type:
MOSFET
Channel Type:
Type N
Maximum Continuous Drain Current Id:
210A
Maximum Drain Source Voltage Vds:
55V
Series:
HEXFET
Package Type:
TO-263
Mount Type:
Surface
Pin Count:
3
Maximum Drain Source Resistance Rds:
30 % @ 100 kHz
Channel Mode:
Enhancement
Minimum Operating Temperature:
-55°C
Typical Gate Charge Qg @ Vgs:
190nC
Maximum Power Dissipation Pd:
300W
Maximum Gate Source Voltage Vgs:
20 V
Forward Voltage Vf:
1.2V
Maximum Operating Temperature:
175°C
Width:
6.22 mm
Standards/Approvals:
No
Length:
6.5mm
Height:
2.3mm
Automotive Standard:
No
pdf icon
A700000007498114.pdf(datasheets)
Explore MOSFETs engineered for fast switching and efficiency. Enrgtech offers power transistors ideal for voltage regulation, amplification, and electronic control systems.
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