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irf200p223 Infineon HEXFET Type N-Channel MOSFET, 100 A, 200 V Enhancement, 3-Pin TO-247
irf200p223 Infineon HEXFET Type N-Channel MOSFET, 100 A, 200 V Enhancement, 3-Pin TO-247

Infineon HEXFET Type N-Channel MOSFET, 100 A, 200 V Enhancement, 3-Pin TO-247

Infineon HEXFET Type N-Channel MOSFET, 100 A, 200 V Enhancement, 3-Pin TO-247

Manufacturer:
Infineon
Manufacturer Part No:
IRF200P223
Enrgtech Part No:
ET21614670
Warranty:
Manufacturer
SAR 3.17 SAR 3.17
Checking for live stock
Channel Type:
Type N
Product Type:
MOSFET
Maximum Continuous Drain Current Id:
100A
Maximum Drain Source Voltage Vds:
200V
Package Type:
TO-247
Series:
HEXFET
Mount Type:
Through Hole
Pin Count:
3
Maximum Drain Source Resistance Rds:
EIA Class II
Channel Mode:
Enhancement
Typical Gate Charge Qg @ Vgs:
55nC
Minimum Operating Temperature:
-55°C
Maximum Gate Source Voltage Vgs:
20 V
Maximum Power Dissipation Pd:
313W
Forward Voltage Vf:
1.2V
Maximum Operating Temperature:
175°C
Height:
34.9mm
Standards/Approvals:
No
Width:
5.31 mm
Length:
15.87mm
Automotive Standard:
No
pdf icon
A700000007498018.pdf(datasheets)
Explore MOSFETs engineered for fast switching and efficiency. Enrgtech offers power transistors ideal for voltage regulation, amplification, and electronic control systems.
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