Infineon CoolMOS CE Type N-Channel MOSFET, 2.6 A, 600 V Enhancement, 3-Pin TO-251

Infineon CoolMOS CE Type N-Channel MOSFET, 2.6 A, 600 V Enhancement, 3-Pin TO-251

Manufacturer:
Manufacturer Part No:
IPS60R3K4CEAKMA1
Enrgtech Part No:
ET21614661
Warranty:
Manufacturer
SAR 0.13 SAR 0.13
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Product Type:
MOSFET
Channel Type:
Type N
Maximum Continuous Drain Current Id:
2.6A
Maximum Drain Source Voltage Vds:
600V
Package Type:
TO-251
Series:
CoolMOS CE
Mount Type:
Through Hole
Pin Count:
3
Maximum Drain Source Resistance Rds:
3.4Ω
Channel Mode:
Enhancement
Typical Gate Charge Qg @ Vgs:
91Ω
Minimum Operating Temperature:
-40°C
Maximum Power Dissipation Pd:
38W
Maximum Gate Source Voltage Vgs:
20 V
Forward Voltage Vf:
0.9V
Maximum Operating Temperature:
150°C
Height:
9.82mm
Width:
2.4 mm
Standards/Approvals:
No
Length:
6.73mm
Automotive Standard:
No
pdf icon
A700000007497954.pdf(datasheets)
Explore MOSFETs engineered for fast switching and efficiency. Enrgtech offers power transistors ideal for voltage regulation, amplification, and electronic control systems.



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