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ipd80r2k7c3aatma1 Infineon IPD Type N-Channel MOSFET, 2 A, 800 V Enhancement, 3-Pin TO-252
ipd80r2k7c3aatma1 Infineon IPD Type N-Channel MOSFET, 2 A, 800 V Enhancement, 3-Pin TO-252

Infineon IPD Type N-Channel MOSFET, 2 A, 800 V Enhancement, 3-Pin TO-252

Infineon IPD Type N-Channel MOSFET, 2 A, 800 V Enhancement, 3-Pin TO-252

Manufacturer:
Infineon
Manufacturer Part No:
IPD80R2K7C3AATMA1
Enrgtech Part No:
ET21614639
Warranty:
Manufacturer
SAR 0.42 SAR 0.42
Checking for live stock
Product Type:
MOSFET
Channel Type:
Type N
Maximum Continuous Drain Current Id:
2A
Maximum Drain Source Voltage Vds:
800V
Package Type:
TO-252
Series:
IPD
Mount Type:
Surface
Pin Count:
3
Maximum Drain Source Resistance Rds:
2.7Ω
Channel Mode:
Enhancement
Minimum Operating Temperature:
-40°C
Maximum Power Dissipation Pd:
42W
Maximum Gate Source Voltage Vgs:
20 V
Typical Gate Charge Qg @ Vgs:
12nC
Forward Voltage Vf:
1.2V
Maximum Operating Temperature:
150°C
Length:
6.73mm
Height:
2.41mm
Width:
6.22 mm
Standards/Approvals:
No
Automotive Standard:
AEC-Q101
pdf icon
A700000007498006.pdf(datasheets)
Explore MOSFETs engineered for fast switching and efficiency. Enrgtech offers power transistors ideal for voltage regulation, amplification, and electronic control systems.
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