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ipd60r600p7sauma1 Infineon IPD Type N-Channel MOSFET, 6 A, 600 V Enhancement, 3-Pin TO-252
ipd60r600p7sauma1 Infineon IPD Type N-Channel MOSFET, 6 A, 600 V Enhancement, 3-Pin TO-252

Infineon IPD Type N-Channel MOSFET, 6 A, 600 V Enhancement, 3-Pin TO-252

Infineon IPD Type N-Channel MOSFET, 6 A, 600 V Enhancement, 3-Pin TO-252

Manufacturer:
Infineon
Manufacturer Part No:
IPD60R600P7SAUMA1
Enrgtech Part No:
ET21614638
Warranty:
Manufacturer
SAR 0.19 SAR 0.19
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Product Type:
MOSFET
Channel Type:
Type N
Maximum Continuous Drain Current Id:
6A
Maximum Drain Source Voltage Vds:
600V
Package Type:
TO-252
Series:
IPD
Mount Type:
Surface
Pin Count:
3
Maximum Drain Source Resistance Rds:
600mΩ
Channel Mode:
Enhancement
Maximum Gate Source Voltage Vgs:
20 V
Maximum Power Dissipation Pd:
41W
Forward Voltage Vf:
0.9V
Typical Gate Charge Qg @ Vgs:
9nC
Minimum Operating Temperature:
-40°C
Maximum Operating Temperature:
150°C
Length:
6.73mm
Standards/Approvals:
No
Height:
2.41mm
Width:
6.22 mm
Automotive Standard:
No
pdf icon
A700000007498002.pdf(datasheets)
Explore MOSFETs engineered for fast switching and efficiency. Enrgtech offers power transistors ideal for voltage regulation, amplification, and electronic control systems.
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