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bsb104n08np3gxusa1 Infineon OptiMOS Type N-Channel MOSFET, 50 A, 80 V Enhancement, 7-Pin MG-WDSON BSB104N08NP3GXUSA1
bsb104n08np3gxusa1 Infineon OptiMOS Type N-Channel MOSFET, 50 A, 80 V Enhancement, 7-Pin MG-WDSON BSB104N08NP3GXUSA1

Infineon OptiMOS Type N-Channel MOSFET, 50 A, 80 V Enhancement, 7-Pin MG-WDSON BSB104N08NP3GXUSA1

Infineon OptiMOS Type N-Channel MOSFET, 50 A, 80 V Enhancement, 7-Pin MG-WDSON BSB104N08NP3GXUSA1

Manufacturer:
Infineon
Manufacturer Part No:
BSB104N08NP3GXUSA1
Enrgtech Part No:
ET21606504
Warranty:
Manufacturer
SAR 0.88 SAR 0.88
Checking for live stock
Product Type:
MOSFET
Channel Type:
Type N
Maximum Continuous Drain Current Id:
50A
Maximum Drain Source Voltage Vds:
80V
Series:
OptiMOS
Package Type:
MG-WDSON
Mount Type:
Surface
Pin Count:
7
Maximum Drain Source Resistance Rds:
10.4mΩ
Channel Mode:
Enhancement
Typical Gate Charge Qg @ Vgs:
3.2 x 4.5mm
Forward Voltage Vf:
1.2V
Minimum Operating Temperature:
-40°C
Maximum Gate Source Voltage Vgs:
20 V
Maximum Power Dissipation Pd:
42W
Maximum Operating Temperature:
150°C
Height:
0.7mm
Standards/Approvals:
No
Length:
5.05mm
Width:
6.35 mm
Automotive Standard:
No
pdf icon
A700000007726233.pdf(datasheets)
Explore MOSFETs engineered for fast switching and efficiency. Enrgtech offers power transistors ideal for voltage regulation, amplification, and electronic control systems.
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