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auirl7736m2tr Infineon HEXFET Type N-Channel MOSFET, 112 A, 40 V Enhancement, 9-Pin DirectFET
auirl7736m2tr Infineon HEXFET Type N-Channel MOSFET, 112 A, 40 V Enhancement, 9-Pin DirectFET

Infineon HEXFET Type N-Channel MOSFET, 112 A, 40 V Enhancement, 9-Pin DirectFET

Infineon HEXFET Type N-Channel MOSFET, 112 A, 40 V Enhancement, 9-Pin DirectFET

Manufacturer:
Infineon
Manufacturer Part No:
AUIRL7736M2TR
Enrgtech Part No:
ET21606503
Warranty:
Manufacturer
SAR 1.06 SAR 1.06
Checking for live stock
Product Type:
MOSFET
Channel Type:
Type N
Maximum Continuous Drain Current Id:
112A
Maximum Drain Source Voltage Vds:
40V
Series:
HEXFET
Package Type:
DirectFET
Mount Type:
Surface
Pin Count:
9
Maximum Drain Source Resistance Rds:
3mΩ
Channel Mode:
Enhancement
Typical Gate Charge Qg @ Vgs:
52nC
Minimum Operating Temperature:
-55°C
Maximum Gate Source Voltage Vgs:
16 V
Maximum Power Dissipation Pd:
IDT
Forward Voltage Vf:
1.3V
Maximum Operating Temperature:
175°C
Length:
6.35mm
Standards/Approvals:
No
Width:
5.05 mm
Height:
0.74mm
Automotive Standard:
AEC-Q101
pdf icon
A700000007726167.pdf(datasheets)
Explore MOSFETs engineered for fast switching and efficiency. Enrgtech offers power transistors ideal for voltage regulation, amplification, and electronic control systems.
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