Infineon HEXFET Type N-Channel MOSFET, 250 A, 40 V Enhancement, 3-Pin TO-263

Infineon HEXFET Type N-Channel MOSFET, 250 A, 40 V Enhancement, 3-Pin TO-263

Manufacturer:
Manufacturer Part No:
AUIRFS8407TRL
Enrgtech Part No:
ET21606501
Warranty:
Manufacturer
SAR 1.34 SAR 1.34
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Product Type:
MOSFET
Channel Type:
Type N
Maximum Continuous Drain Current Id:
250A
Maximum Drain Source Voltage Vds:
40V
Package Type:
TO-263
Series:
HEXFET
Mount Type:
Surface
Pin Count:
3
Maximum Drain Source Resistance Rds:
1.8mΩ
Channel Mode:
Enhancement
Forward Voltage Vf:
1.3V
Maximum Power Dissipation Pd:
230W
Maximum Gate Source Voltage Vgs:
20 V
Typical Gate Charge Qg @ Vgs:
150nC
Minimum Operating Temperature:
-55°C
Maximum Operating Temperature:
175°C
Length:
10.67mm
Standards/Approvals:
No
Width:
9.65 mm
Height:
4.83mm
Automotive Standard:
AEC-Q101
pdf icon
A700000007726581.pdf(datasheets)
Explore MOSFETs engineered for fast switching and efficiency. Enrgtech offers power transistors ideal for voltage regulation, amplification, and electronic control systems.



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