Infineon HEXFET Type N-Channel MOSFET, 340 A, 40 V Enhancement, 3-Pin TO-263

Infineon HEXFET Type N-Channel MOSFET, 340 A, 40 V Enhancement, 3-Pin TO-263

Manufacturer:
Manufacturer Part No:
AUIRFS3004TRL
Enrgtech Part No:
ET21606499
Warranty:
Manufacturer
SAR 2.42 SAR 2.42
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Channel Type:
Type N
Product Type:
MOSFET
Maximum Continuous Drain Current Id:
340A
Maximum Drain Source Voltage Vds:
40V
Package Type:
TO-263
Series:
HEXFET
Mount Type:
Surface
Pin Count:
3
Maximum Drain Source Resistance Rds:
1.75mΩ
Channel Mode:
Enhancement
Typical Gate Charge Qg @ Vgs:
160nC
Minimum Operating Temperature:
-55°C
Maximum Gate Source Voltage Vgs:
20 V
Maximum Power Dissipation Pd:
380W
Forward Voltage Vf:
1.3V
Maximum Operating Temperature:
175°C
Width:
9.65 mm
Length:
10.67mm
Standards/Approvals:
No
Height:
4.83mm
Automotive Standard:
AEC-Q101
pdf icon
A700000007726388.pdf(datasheets)
Explore MOSFETs engineered for fast switching and efficiency. Enrgtech offers power transistors ideal for voltage regulation, amplification, and electronic control systems.



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