Infineon HEXFET Type N-Channel MOSFET, 35 A, 100 V Enhancement, 3-Pin TO-252

Infineon HEXFET Type N-Channel MOSFET, 35 A, 100 V Enhancement, 3-Pin TO-252

Manufacturer:
Manufacturer Part No:
AUIRFR540Z
Enrgtech Part No:
ET21606498
Warranty:
Manufacturer
SAR 0.74 SAR 0.74
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Channel Type:
Type N
Product Type:
MOSFET
Maximum Continuous Drain Current Id:
35A
Maximum Drain Source Voltage Vds:
100V
Package Type:
TO-252
Series:
HEXFET
Mount Type:
Surface
Pin Count:
3
Maximum Drain Source Resistance Rds:
28.5mΩ
Channel Mode:
Enhancement
Typical Gate Charge Qg @ Vgs:
39nC
Maximum Power Dissipation Pd:
91W
Maximum Gate Source Voltage Vgs:
20 V
Minimum Operating Temperature:
-55°C
Forward Voltage Vf:
1.3V
Maximum Operating Temperature:
175°C
Standards/Approvals:
No
Length:
330µF
Height:
2.39mm
Width:
6.73 mm
Automotive Standard:
AEC-Q101
pdf icon
A700000007726103.pdf(datasheets)
Explore MOSFETs engineered for fast switching and efficiency. Enrgtech offers power transistors ideal for voltage regulation, amplification, and electronic control systems.



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