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sihb15n80ae-ge3 Vishay E Type N-Channel MOSFET, 13 A, 800 V Enhancement, 3-Pin TO-263
sihb15n80ae-ge3 Vishay E Type N-Channel MOSFET, 13 A, 800 V Enhancement, 3-Pin TO-263

Vishay E Type N-Channel MOSFET, 13 A, 800 V Enhancement, 3-Pin TO-263

Vishay E Type N-Channel MOSFET, 13 A, 800 V Enhancement, 3-Pin TO-263

Manufacturer:
Vishay
Manufacturer Part No:
SIHB15N80AE-GE3
Enrgtech Part No:
ET21591986
Warranty:
Manufacturer
SAR 1.30 SAR 1.30
Checking for live stock
Channel Type:
Type N
Product Type:
MOSFET
Maximum Continuous Drain Current Id:
13A
Maximum Drain Source Voltage Vds:
800V
Series:
E
Package Type:
TO-263
Mount Type:
Surface
Pin Count:
3
Maximum Drain Source Resistance Rds:
304mΩ
Channel Mode:
Enhancement
Maximum Power Dissipation Pd:
158W
Typical Gate Charge Qg @ Vgs:
35nC
Minimum Operating Temperature:
-55°C
Maximum Gate Source Voltage Vgs:
30 V
Forward Voltage Vf:
1.2V
Maximum Operating Temperature:
150°C
Length:
14.61mm
Width:
9.65 mm
Standards/Approvals:
No
Height:
4.06mm
Automotive Standard:
No
pdf icon
A700000007242108.pdf(datasheets)
Explore MOSFETs engineered for fast switching and efficiency. Enrgtech offers power transistors ideal for voltage regulation, amplification, and electronic control systems.
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