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sidr626ldp-t1-re3 Vishay SiDR626LDP Type N-Channel MOSFET, 204 A, 60 V Enhancement, 8-Pin SO-8
sidr626ldp-t1-re3 Vishay SiDR626LDP Type N-Channel MOSFET, 204 A, 60 V Enhancement, 8-Pin SO-8

Vishay SiDR626LDP Type N-Channel MOSFET, 204 A, 60 V Enhancement, 8-Pin SO-8

Vishay SiDR626LDP Type N-Channel MOSFET, 204 A, 60 V Enhancement, 8-Pin SO-8

Manufacturer:
Vishay
Manufacturer Part No:
SiDR626LDP-T1-RE3
Enrgtech Part No:
ET21591980
Warranty:
Manufacturer
SAR 1.05 SAR 1.05
Checking for live stock
Product Type:
MOSFET
Channel Type:
Type N
Maximum Continuous Drain Current Id:
204A
Maximum Drain Source Voltage Vds:
60V
Series:
SiDR626LDP
Package Type:
SO-8
Mount Type:
Surface
Pin Count:
8
Maximum Drain Source Resistance Rds:
1.2mΩ
Channel Mode:
Enhancement
Forward Voltage Vf:
1.1V
Typical Gate Charge Qg @ Vgs:
41nC
Minimum Operating Temperature:
-55°C
Maximum Gate Source Voltage Vgs:
20 V
Maximum Power Dissipation Pd:
125W
Maximum Operating Temperature:
150°C
Standards/Approvals:
No
Height:
0.51mm
Width:
4.9 mm
Length:
5.9mm
Automotive Standard:
No
pdf icon
A700000007242024.pdf(datasheets)
Explore MOSFETs engineered for fast switching and efficiency. Enrgtech offers power transistors ideal for voltage regulation, amplification, and electronic control systems.
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