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ntjd4152pt1g onsemi Isolated 2 Type P-Channel MOSFET, 880 mA, 20 V Enhancement, 6-Pin SOT-363 NTJD4152PT1G
ntjd4152pt1g onsemi Isolated 2 Type P-Channel MOSFET, 880 mA, 20 V Enhancement, 6-Pin SOT-363 NTJD4152PT1G
ntjd4152pt1g onsemi Isolated 2 Type P-Channel MOSFET, 880 mA, 20 V Enhancement, 6-Pin SOT-363 NTJD4152PT1G

onsemi Isolated 2 Type P-Channel MOSFET, 880 mA, 20 V Enhancement, 6-Pin SOT-363 NTJD4152PT1G

onsemi Isolated 2 Type P-Channel MOSFET, 880 mA, 20 V Enhancement, 6-Pin SOT-363 NTJD4152PT1G

Manufacturer:
onsemi
Manufacturer Part No:
NTJD4152PT1G
Enrgtech Part No:
ET21469505
Warranty:
Manufacturer
SAR 0.20 SAR 0.20
Checking for live stock
Channel Type:
Type P
Product Type:
MOSFET
Maximum Continuous Drain Current Id:
880mA
Maximum Drain Source Voltage Vds:
20V
Package Type:
SOT-363
Mount Type:
Surface
Pin Count:
6
Maximum Drain Source Resistance Rds:
1Ω
Channel Mode:
Enhancement
Maximum Power Dissipation Pd:
350mW
Typical Gate Charge Qg @ Vgs:
2.2nC
Forward Voltage Vf:
-0.8V
Maximum Gate Source Voltage Vgs:
±12 V
Minimum Operating Temperature:
-55°C
Transistor Configuration:
Isolated
Maximum Operating Temperature:
150°C
Standards/Approvals:
No
Height:
1mm
Width:
1.35 mm
Length:
2.2mm
Number of Elements per Chip:
2
Automotive Standard:
AEC-Q101
pdf icon
0900766b81206047.pdf(datasheets)
pdf icon
0900766b81644fb0.pdf(datasheets)
Explore MOSFETs engineered for fast switching and efficiency. Enrgtech offers power transistors ideal for voltage regulation, amplification, and electronic control systems.
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