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fdb28n30tm onsemi UniFET Type N-Channel MOSFET, 28 A, 300 V Enhancement, 3-Pin TO-263 FDB28N30TM
fdb28n30tm onsemi UniFET Type N-Channel MOSFET, 28 A, 300 V Enhancement, 3-Pin TO-263 FDB28N30TM
fdb28n30tm onsemi UniFET Type N-Channel MOSFET, 28 A, 300 V Enhancement, 3-Pin TO-263 FDB28N30TM

onsemi UniFET Type N-Channel MOSFET, 28 A, 300 V Enhancement, 3-Pin TO-263 FDB28N30TM

onsemi UniFET Type N-Channel MOSFET, 28 A, 300 V Enhancement, 3-Pin TO-263 FDB28N30TM

Manufacturer:
onsemi
Manufacturer Part No:
FDB28N30TM
Enrgtech Part No:
ET21458907
Warranty:
Manufacturer
SAR 1.65 SAR 1.65
Checking for live stock
Product Type:
MOSFET
Channel Type:
Type N
Maximum Continuous Drain Current Id:
28A
Maximum Drain Source Voltage Vds:
300V
Series:
UniFET
Package Type:
TO-263
Mount Type:
Surface
Pin Count:
3
Maximum Drain Source Resistance Rds:
129mΩ
Channel Mode:
Enhancement
Typical Gate Charge Qg @ Vgs:
39nC
Maximum Power Dissipation Pd:
250W
Maximum Gate Source Voltage Vgs:
30 V
Minimum Operating Temperature:
-55°C
Forward Voltage Vf:
1.4V
Maximum Operating Temperature:
150°C
Length:
10.67mm
Height:
4.83mm
Width:
11.33 mm
Standards/Approvals:
No
Automotive Standard:
No
pdf icon
0900766b810c95bf.pdf(datasheets)
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0900766b81644fb4.pdf(datasheets)
pdf icon
A700000011364191.pdf(datasheets)
Explore MOSFETs engineered for fast switching and efficiency. Enrgtech offers power transistors ideal for voltage regulation, amplification, and electronic control systems.
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