onsemi N-Channel MOSFET, 680 mA, 25 V, 3-Pin SOT-23 FDV303N

onsemi N-Channel MOSFET, 680 mA, 25 V, 3-Pin SOT-23 FDV303N

Manufacturer:
Manufacturer Part No:
FDV303N
Enrgtech Part No:
ET21455850
Warranty:
Manufacturer
SAR 0.08 SAR 0.08
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Channel Type:
N
Maximum Continuous Drain Current:
680 mA
Maximum Drain Source Voltage:
25 V
Package Type:
SOT-23
Mounting Type:
Surface Mount
Pin Count:
3
Maximum Drain Source Resistance:
450 mΩ
Channel Mode:
Enhancement
Minimum Gate Threshold Voltage:
0.65V
Maximum Power Dissipation:
350 mW
Transistor Configuration:
Single
Maximum Gate Source Voltage:
+8 V
Width:
1.3mm
Length:
2.92mm
Number of Elements per Chip:
1
Maximum Operating Temperature:
+150 °C
Transistor Material:
Si
Typical Gate Charge @ Vgs:
1.64 nC @ 4.5 V
Minimum Operating Temperature:
-55 °C
Height:
0.93mm
pdf icon
0900766b814e65c1.pdf(datasheets)
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0900766b81644fb2.pdf(datasheets)
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A700000009707458.pdf(datasheets)
Explore MOSFETs engineered for fast switching and efficiency. Enrgtech offers power transistors ideal for voltage regulation, amplification, and electronic control systems.



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