Vishay EF Type N-Channel MOSFET, 29 A, 650 V Enhancement, 3-Pin TO-220 SiHP105N60EF-GE3

Vishay EF Type N-Channel MOSFET, 29 A, 650 V Enhancement, 3-Pin TO-220 SiHP105N60EF-GE3

Manufacturer:
Manufacturer Part No:
SiHP105N60EF-GE3
Enrgtech Part No:
ET19996182
Warranty:
Manufacturer
SAR 2.44 SAR 2.44
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Channel Type:
Type N
Product Type:
MOSFET
Maximum Continuous Drain Current Id:
29A
Maximum Drain Source Voltage Vds:
650V
Series:
EF
Package Type:
TO-220
Mount Type:
Through Hole
Pin Count:
3
Maximum Drain Source Resistance Rds:
88mΩ
Channel Mode:
Enhancement
Typical Gate Charge Qg @ Vgs:
PSI
Maximum Gate Source Voltage Vgs:
30 V
Maximum Power Dissipation Pd:
208W
Forward Voltage Vf:
1.2V
Minimum Operating Temperature:
-55°C
Maximum Operating Temperature:
150°C
Height:
14.4mm
Width:
4.65 mm
Standards/Approvals:
No
Length:
10.52mm
Automotive Standard:
No
pdf icon
A700000006826778.pdf(datasheets)
Explore MOSFETs engineered for fast switching and efficiency. Enrgtech offers power transistors ideal for voltage regulation, amplification, and electronic control systems.



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