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sisha14dn-t1-ge3 Vishay N-Channel MOSFET, 20 A, 30 V, 8-Pin PowerPAK 1212-8SH SiSHA14DN-T1-GE3
sisha14dn-t1-ge3 Vishay N-Channel MOSFET, 20 A, 30 V, 8-Pin PowerPAK 1212-8SH SiSHA14DN-T1-GE3

Vishay N-Channel MOSFET, 20 A, 30 V, 8-Pin PowerPAK 1212-8SH SiSHA14DN-T1-GE3

Vishay N-Channel MOSFET, 20 A, 30 V, 8-Pin PowerPAK 1212-8SH SiSHA14DN-T1-GE3

Manufacturer:
Vishay
Manufacturer Part No:
SiSHA14DN-T1-GE3
Enrgtech Part No:
ET18211545
Warranty:
Manufacturer
SAR 0.70
Checking for live stock
Channel Type:
N
Maximum Continuous Drain Current:
20 A
Maximum Drain Source Voltage:
30 V
Package Type:
PowerPAK 1212-8SH
Mounting Type:
Surface Mount
Pin Count:
8
Maximum Drain Source Resistance:
8 mΩ
Channel Mode:
Enhancement
Maximum Gate Threshold Voltage:
2.2V
Minimum Gate Threshold Voltage:
1.1V
Maximum Power Dissipation:
26.5 W
Transistor Configuration:
Single
Maximum Gate Source Voltage:
-16 V, +20 V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
19.4 nC @ 10 V
Length:
3.3mm
Width:
3.3mm
Number of Elements per Chip:
1
Height:
0.93mm
Forward Diode Voltage:
1.1V
Minimum Operating Temperature:
-55 °C
pdf icon
0900766b8170a2c4.pdf(datasheets)
Explore MOSFETs engineered for fast switching and efficiency. Enrgtech offers power transistors ideal for voltage regulation, amplification, and electronic control systems.
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