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si2300ds-t1-ge3 Vishay TrenchFET Type N-Channel MOSFET, 3.6 A, 30 V Enhancement, 3-Pin SOT-23
si2300ds-t1-ge3 Vishay TrenchFET Type N-Channel MOSFET, 3.6 A, 30 V Enhancement, 3-Pin SOT-23

Vishay TrenchFET Type N-Channel MOSFET, 3.6 A, 30 V Enhancement, 3-Pin SOT-23

Vishay TrenchFET Type N-Channel MOSFET, 3.6 A, 30 V Enhancement, 3-Pin SOT-23

Manufacturer:
Vishay
Manufacturer Part No:
SI2300DS-T1-GE3
Enrgtech Part No:
ET16979270
Warranty:
Manufacturer
SAR 0.12 SAR 0.12
Checking for live stock
Product Type:
MOSFET
Channel Type:
Type N
Maximum Continuous Drain Current Id:
3.6A
Maximum Drain Source Voltage Vds:
30V
Package Type:
SOT-23
Series:
TrenchFET
Mount Type:
Surface
Pin Count:
3
Maximum Drain Source Resistance Rds:
68mΩ
Channel Mode:
Enhancement
Forward Voltage Vf:
1.2V
Maximum Gate Source Voltage Vgs:
12 V
Minimum Operating Temperature:
-55°C
Typical Gate Charge Qg @ Vgs:
9.6 A
Maximum Power Dissipation Pd:
1.1W
Maximum Operating Temperature:
150°C
Standards/Approvals:
No
Width:
2.64 mm
Height:
1.12mm
Length:
3.04mm
Automotive Standard:
No
pdf icon
A700000006403493.pdf(datasheets)
Explore MOSFETs engineered for fast switching and efficiency. Enrgtech offers power transistors ideal for voltage regulation, amplification, and electronic control systems.
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