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si1411dh-t1-ge3 Vishay TrenchFET Type P-Channel MOSFET, 0.52 A, 150 V Enhancement, 6-Pin SOT-363
si1411dh-t1-ge3 Vishay TrenchFET Type P-Channel MOSFET, 0.52 A, 150 V Enhancement, 6-Pin SOT-363

Vishay TrenchFET Type P-Channel MOSFET, 0.52 A, 150 V Enhancement, 6-Pin SOT-363

Vishay TrenchFET Type P-Channel MOSFET, 0.52 A, 150 V Enhancement, 6-Pin SOT-363

Manufacturer:
Vishay
Manufacturer Part No:
SI1411DH-T1-GE3
Enrgtech Part No:
ET16960853
Warranty:
Manufacturer
SAR 0.26 SAR 0.26
Checking for live stock
Product Type:
MOSFET
Channel Type:
Type P
Maximum Continuous Drain Current Id:
0.52A
Maximum Drain Source Voltage Vds:
150V
Package Type:
SOT-363
Series:
TrenchFET
Mount Type:
Surface
Pin Count:
6
Maximum Drain Source Resistance Rds:
2.6Ω
Channel Mode:
Enhancement
Typical Gate Charge Qg @ Vgs:
4.2nC
Minimum Operating Temperature:
-55°C
Maximum Power Dissipation Pd:
1W
Maximum Gate Source Voltage Vgs:
20 V
Forward Voltage Vf:
-1.1V
Maximum Operating Temperature:
150°C
Height:
1.1mm
Width:
2.4 mm
Standards/Approvals:
No
Length:
2.2mm
Automotive Standard:
No
pdf icon
A700000006403957.pdf(datasheets)
Explore MOSFETs engineered for fast switching and efficiency. Enrgtech offers power transistors ideal for voltage regulation, amplification, and electronic control systems.
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