Toshiba Type N-Channel MOSFET, 65 A, 60 V Enhancement, 8-Pin TSON TPN14006NH,L1Q(M

Toshiba Type N-Channel MOSFET, 65 A, 60 V Enhancement, 8-Pin TSON TPN14006NH,L1Q(M

Manufacturer:
Manufacturer Part No:
TPN14006NH,L1Q(M
Enrgtech Part No:
ET16890164
Warranty:
Manufacturer
SAR 0.42 SAR 0.42
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Channel Type:
Type N
Product Type:
MOSFET
Maximum Continuous Drain Current Id:
65A
Maximum Drain Source Voltage Vds:
60V
Package Type:
TSON
Mount Type:
Surface
Pin Count:
8
Maximum Drain Source Resistance Rds:
14MHz
Channel Mode:
Enhancement
Forward Voltage Vf:
-1.2V
Maximum Power Dissipation Pd:
30W
Maximum Gate Source Voltage Vgs:
20 V
Minimum Operating Temperature:
-55°C
Typical Gate Charge Qg @ Vgs:
15nC
Maximum Operating Temperature:
150°C
Height:
0.85mm
Standards/Approvals:
No
Width:
3.1 mm
Length:
3.1mm
Automotive Standard:
No
pdf icon
0900766b81628197.pdf(datasheets)
Explore MOSFETs engineered for fast switching and efficiency. Enrgtech offers power transistors ideal for voltage regulation, amplification, and electronic control systems.



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