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si1032r-t1-ge3 Vishay TrenchFET Type N-Channel MOSFET, 210 mA, 20 V Enhancement, 3-Pin SC-75 SI1032R-T1-GE3
si1032r-t1-ge3 Vishay TrenchFET Type N-Channel MOSFET, 210 mA, 20 V Enhancement, 3-Pin SC-75 SI1032R-T1-GE3

Vishay TrenchFET Type N-Channel MOSFET, 210 mA, 20 V Enhancement, 3-Pin SC-75 SI1032R-T1-GE3

Vishay TrenchFET Type N-Channel MOSFET, 210 mA, 20 V Enhancement, 3-Pin SC-75 SI1032R-T1-GE3

Manufacturer:
Vishay
Manufacturer Part No:
SI1032R-T1-GE3
Enrgtech Part No:
ET16833709
Warranty:
Manufacturer
SAR 0.65 SAR 0.65
Checking for live stock
Channel Type:
Type N
Product Type:
MOSFET
Maximum Continuous Drain Current Id:
210mA
Maximum Drain Source Voltage Vds:
20V
Package Type:
SC-75
Series:
TrenchFET
Mount Type:
Surface
Pin Count:
3
Maximum Drain Source Resistance Rds:
10Ω
Channel Mode:
Enhancement
Forward Voltage Vf:
1.2V
Minimum Operating Temperature:
-55°C
Maximum Gate Source Voltage Vgs:
±6 V
Maximum Power Dissipation Pd:
340mW
Maximum Operating Temperature:
150°C
Standards/Approvals:
IEC 61249-2-21, RoHS
Height:
0.8mm
Width:
0.86 mm
Length:
1.68mm
Automotive Standard:
No
pdf icon
0900766b8126ce44.pdf(datasheets)
pdf icon
0900766b81644fb0.pdf(datasheets)
Explore MOSFETs engineered for fast switching and efficiency. Enrgtech offers power transistors ideal for voltage regulation, amplification, and electronic control systems.
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