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ryc002n05t316 ROHM RYC002N05 Type N-Channel MOSFET, 200 mA, 50 V Enhancement, 3-Pin SOT-23 RYC002N05T316
ryc002n05t316 ROHM RYC002N05 Type N-Channel MOSFET, 200 mA, 50 V Enhancement, 3-Pin SOT-23 RYC002N05T316
ryc002n05t316 ROHM RYC002N05 Type N-Channel MOSFET, 200 mA, 50 V Enhancement, 3-Pin SOT-23 RYC002N05T316

ROHM RYC002N05 Type N-Channel MOSFET, 200 mA, 50 V Enhancement, 3-Pin SOT-23 RYC002N05T316

ROHM RYC002N05 Type N-Channel MOSFET, 200 mA, 50 V Enhancement, 3-Pin SOT-23 RYC002N05T316

Manufacturer:
ROHM
Manufacturer Part No:
RYC002N05T316
Enrgtech Part No:
ET16830201
Warranty:
Manufacturer
SAR 0.11 SAR 0.11
Checking for live stock
Product Type:
MOSFET
Channel Type:
Type N
Maximum Continuous Drain Current Id:
200mA
Maximum Drain Source Voltage Vds:
50V
Series:
RYC002N05
Package Type:
SOT-23
Mount Type:
Surface
Pin Count:
3
Maximum Drain Source Resistance Rds:
9Ω
Channel Mode:
Enhancement
Maximum Gate Source Voltage Vgs:
8 V
Minimum Operating Temperature:
-55°C
Typical Gate Charge Qg @ Vgs:
37.6mm
Maximum Power Dissipation Pd:
350mW
Forward Voltage Vf:
1.2V
Maximum Operating Temperature:
150°C
Length:
3.1mm
Width:
1.5 mm
Height:
1.15mm
Standards/Approvals:
No
Automotive Standard:
No
pdf icon
0900766b8156b2b9.pdf(datasheets)
pdf icon
0900766b81644fb2.pdf(datasheets)
Explore MOSFETs engineered for fast switching and efficiency. Enrgtech offers power transistors ideal for voltage regulation, amplification, and electronic control systems.
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