Nexperia Type P-Channel MOSFET, -3.2 A, -12 V Enhancement, 4-Pin DFN

Nexperia Type P-Channel MOSFET, -3.2 A, -12 V Enhancement, 4-Pin DFN

Manufacturer:
Manufacturer Part No:
PMXB65UPEZ
Enrgtech Part No:
ET16800573
Warranty:
Manufacturer
SAR 0.07 SAR 0.07
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Product Type:
MOSFET
Channel Type:
Type P
Maximum Continuous Drain Current Id:
-3.2A
Maximum Drain Source Voltage Vds:
-12V
Package Type:
DFN
Mount Type:
Surface
Pin Count:
4
Maximum Drain Source Resistance Rds:
880mΩ
Channel Mode:
Enhancement
Typical Gate Charge Qg @ Vgs:
91Ω
Maximum Power Dissipation Pd:
8.33W
Maximum Gate Source Voltage Vgs:
8 V
Minimum Operating Temperature:
-55°C
Maximum Operating Temperature:
150°C
Width:
1.05 mm
Standards/Approvals:
No
Height:
0.36mm
Length:
1.15mm
Automotive Standard:
No
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0900766b815f3a8b.pdf(datasheets)
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0900766b81644fb2.pdf(datasheets)
Explore MOSFETs engineered for fast switching and efficiency. Enrgtech offers power transistors ideal for voltage regulation, amplification, and electronic control systems.



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